[7p-N105-1~11] 22.1 Joint Session M "Phonon Engineering"

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[7p-N105-9] High-Thermal-Conductance GaN/Diamond Interface Achieved by Surface-Activated Bonding

〇BIN XU¹, Fengwen Mu², Shiqian Hu³, Rulei Guo¹, Junichiro Shiomi¹ (1.Univ. Tokyo, 2.CAS, 3.Yunnan Univ.)

Keywords:

diamond,thermal management