Presentation Information

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[7p-N401-2]Terahertz Field Sensors Using Electro-Optic Effect in a Semiconductor Microcavity: Theoretical Study on the Frequency Dependence of Phase-Shift Signal

〇Takahiro Kitada¹, Yukihiro Harada², Toshiyuki Kaizu³, Yasuo Minami⁴, Osamu Kojima⁵, Takashi Kita², Osamu Wada⁶ (1.NIT of Matsue, 2.Grad. Sch. of Eng., Kobe Univ., 3.UEC, 4.Nihon Univ., 5.Chiba Inst. Tech., 6.Kobe Univ.)

Keywords:

optical microcavity,electro-optic effect,terahertz sensing

We have proposed terahertz (THz) field sensors using electro-optic (EO) effect in a GaAs-based multilayer microcavity. In the sensor, the infrared probe light is used for the detection of the phase-shift signal due to birefringence arising from EO effect induced by the THz field irradiation. Long photon lifetime in the optical microcavity enables us to detect the clear phase-shift signal even for the vertical incidence geometry. In this study, we evaluated the frequency dependence of the phase-shift signal by numerical simulation.

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