[7p-N401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices | The 86th JSAP Autumn Meeting 2025

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Oral presentation13 Semiconductors : 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[7p-N401-1~16]13.6 Nanostructures, quantum phenomena, and nano quantum devices

Sun. Sep 7, 2025 1:30 PM - 6:15 PM JST
Sun. Sep 7, 2025 4:30 AM - 9:15 AM UTC

N401 (Lecture Hall North)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[7p-N401-1]Terahertz wave generation originating from miniband structures in semiconductor superlattices

〇Takayuki Hasegawa¹, Tomoki Den¹, Akira Fujimoto¹ (1.Osaka Inst. Technol.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[7p-N401-2]Terahertz Field Sensors Using Electro-Optic Effect in a Semiconductor Microcavity: Theoretical Study on the Frequency Dependence of Phase-Shift Signal

〇Takahiro Kitada¹, Yukihiro Harada², Toshiyuki Kaizu³, Yasuo Minami⁴, Osamu Kojima⁵, Takashi Kita², Osamu Wada⁶ (1.NIT of Matsue, 2.Grad. Sch. of Eng., Kobe Univ., 3.UEC, 4.Nihon Univ., 5.Chiba Inst. Tech., 6.Kobe Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[7p-N401-3]Effects of free carriers on difference-frequency-mixing signal under exciton resonant excitation condition in a GaAs/AlAs multiple quantum well

〇Jiaming Xu¹, Osamu Kojima¹, Matthew Steer², Richard Hogg^2,3 (1.Chiba Inst. Tech., 2.Univ. Glasgow, 3.Aston Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[7p-N401-4]Effects of strain on polarization characteristics of exction photoluminescence in a GaSb/AlGaSb multiple quantum well grown on Si substrate

〇Daiki Yamaguchi¹, Osamu Kojima¹, Kouichi Akahane² (1.Chiba Inst. Tech., 2.NICT)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[7p-N401-5][The 58th Young Scientist Presentation Award Speech] Spatial Mapping of Quantum Dot Ensemble Dynamics Across Multiple Timescales Using Remote Dual-Comb Asynchronous Optical Sampling

〇Gen Asambo^1,2, Riku Shibata^1,2, Yushiro Takahashi^1,2, Kouichi Akahane³, Shinichi Watanabe^1,2, Junko Ishi-Hayase^1,2 (1.Keio Univ., 2.Keio CSRN, 3.NICT)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N401-6]Electric field control of circular polarization oscillation characteristics in InGaAs quantum dots tunnel-coupled with a GaNAs quantum well

〇Shunsuke Sakano¹, Hiroto Kise¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[7p-N401-7]Bias voltage dependence of circularly polarized luminescence properties of InGaAs quantum dots sandwiched between GaNAs quantum wells

〇Kyota Nakadate¹, Hiroto Kise¹, Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[7p-N401-8]Effects of nitrogen layer on photoreflectance spectra in GaAs crystals including InAs quantum dots

〇Osamu Kojima¹, Tomoya Inoue², Takashi Kita² (1.Chiba Inst. Tech., 2.Kobe Univ.)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N401-9]Wavelength Control and Defect-Free InGaN Nanoplatelets via Selective Etching and Regrowth

〇(DC)Qingyuan Han¹, Wentao Cai², Jia Wang^2,3, Yuta Ito¹, Yuta Furusawa², Haitao Wang², Heajeong Cheong^1,2,4, Markus Pristovsek², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Dept. Electronics, NU, 2.IMaSS, NU, 3.IAR, NU, 4.DTSIC, NU)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N401-10]Selective-area MOVPE of InGaAs core-multishell nanowires on thin SOI layer and fabrication of vertical gate-all-around tunnel FETs

〇(M1)Kai Fujimoto^1,2, Keita Taniyama^1,2, Yuki Azuma^1,2, Ryosei Uchida^1,2, Junichi Motohisa^1,2, Katsuhiro Tomioka^1,2 (1.Hokkaido Univ., 2.RCIQE)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N401-11]Fabrication of InP crystal phase transition heterojunction vertical transistor

〇Ryosei Uchida^1,2, Yuki Azuma^1,2, Keita Taniyama^1,2, Junichi Motohisa^1,2, Katsuhiro Tomioka^1,2 (1.Hokkaido Univ., 2.RCIQE)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[7p-N401-12]Electron transport through single InAs colloidal quantum dots

〇Kenji Shibata¹, Tomoki Takiguchi¹, Akira Sato¹, Yuto Sasaki¹, Tomohiro Otsuka² (1.Tohoku Inst. Tech., 2.RIEC, Tohoku Univ.)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[7p-N401-13]Impurity Ion Doping into Si Quantum Dots

〇Kazumasa Yonetsu¹, Tomohisa Mizuno¹ (1.Kanagawa Univ.)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[7p-N401-14]Optical Properties of SiO_x Thin Films Containing Si Quantum Dots and Electrical Characterization of MIS Devices

〇Toshiya Kondo¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[7p-N401-15]Carrier relaxation dynamics in green InGaN / GaN quantum dots

〇Reiho Ozaki¹, Yuto Nakama¹, Riku Iwasaki¹, Atushi Tackeuchi¹, Shulong Lu², Xue Zhang², Wenxian Yang² (1.Waseda Univ., 2.SINANO)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[7p-N401-16]Quantitative Analysis of Electron Spin Relaxation Time in Bulk GaAs

〇Satoshi Iba¹, Yuzo Ohno^1,2 (1.AIST, 2.Univ. of Tsukuba)

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