Presentation Information
[7p-P03-27]Spin Hall Effect and Thermal Stability in doped Pt amorphous films
〇(M1)Souki Mizota1, Imai Kouki1, Hombo Taichi1, Mohan John Rex1, Horibe Yoichi1, Ishimaru Manabu1, Asada Hironori2, Fukuma Yasuhiro1 (1.Kyushu Inst Tech, 2.Yamaguchi Univ)
Keywords:
Spin Hall Effect,Amorphous Thin Films,Structural Change
In this study, Pt thin films co-doped with N2 and Cu were implanted with phosphorus ions, and their spin Hall effect and structural stability were evaluated. XRD revealed that the films became amorphous after P implantation, and the PtP2 phase formed upon annealing at 400 °C. With a nitrogen gas flow ratio of 20%, grain growth of PtP2 was suppressed. The resistivity increased due to PtP2 precipitation, and ST-FMR measurements after 400 °C annealing showed that the spin Hall angle θSHE reached a maximum of 0.38.