Presentation Information
[7p-P03-32]Fabrication of nanoscale magnetic tunnel junctions utilizing thin-film edges
〇Takumi Ueda1, Mizuki Matsuzaka1, Chika Hashimoto1, Kosuke Furukawa1, Ryunosuke Miyamoto1, Kotaro Kashima1, Hideo Kaiju1,2 (1.Keio Univ., 2.CSRN, Keio Univ.)
Keywords:
magnetic tunnel junction,tunnel magnetoresistance effect,spintronics
Magnetic tunnel junctions (MTJs) with various shapes have been reported, and the junction area of MTJs ranges from milli-/micro-meters to nanometers. Recently, we have successfully fabricated nanojunctions using molecules sandwiched between Ni78Fe22 (Py) thin-film edges. This device is magnetically stable, and the resistance of its electrodes is relatively small. Therefore, the device can realize a high signal-to-noise ratio and low power consumption. In this study, towards the observation of tunnel magnetoresistance effect, AlOx-based nanoscale MTJs using thin-film edges are fabricated, and their structural, electrical and magnetic properties are investigated. Prior to device fabrication, we investigated magnetic, structural and electrical properties of thin-film electrodes. As a result, the fabricated electrodes can be used in the nanoscale MTJs. In the fabricated MTJs, we measured magnetoresistance by DC four-probe method under magnetic field. The detailed measurement results will be presented in the poster session.