[7p-P03-1~47] 10 スピントロニクス・マグネティクス（ポスター）

[7p-P03-32] 磁性薄膜エッジを利用したナノスケール磁気トンネル接合の作製

〇上田 拓海¹、松坂 美月¹、橋本 千佳¹、古川 昂佑¹、宮本 龍之介¹、鹿嶋 倖太郎¹、海住 英生^1,2 (1.慶大理工、2.慶大スピンセンター)

キーワード：

磁気トンネル接合、トンネル磁気抵抗効果、スピントロニクス

Magnetic tunnel junctions (MTJs) with various shapes have been reported, and the junction area of MTJs ranges from milli-/micro-meters to nanometers. Recently, we have successfully fabricated nanojunctions using molecules sandwiched between Ni₇₈Fe₂₂ (Py) thin-film edges. This device is magnetically stable, and the resistance of its electrodes is relatively small. Therefore, the device can realize a high signal-to-noise ratio and low power consumption. In this study, towards the observation of tunnel magnetoresistance effect, AlO_x-based nanoscale MTJs using thin-film edges are fabricated, and their structural, electrical and magnetic properties are investigated. Prior to device fabrication, we investigated magnetic, structural and electrical properties of thin-film electrodes. As a result, the fabricated electrodes can be used in the nanoscale MTJs. In the fabricated MTJs, we measured magnetoresistance by DC four-probe method under magnetic field. The detailed measurement results will be presented in the poster session.