[8a-N107-1~7] 2.1 Radiation physics, Material development and characteristic evaluation

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[8a-N107-2] Evaluation of annealing process of vacuum-deposited polycrystalline TlBr films

〇(D)Kohei Toyoda^1,2, Katsuyuki Takagi^2,3, Hiroki Kase³, Toru Aoki^1,2,3 (1.Shizuoka Univ. C.M.M.P., 2.ANSeeN, 3.Shizuoka Univ. R.I.E.)

Keywords:

Thallium Bromide,Vacuum Deposited,polycrystalline films

Thallium bromide (TlBr) is a semiconductor material with a band gap of 2.68 eV. TlBr exhibits high absorption efficiency for X-rays and gamma rays, and is expected to be a suitable material for semiconductor detectors. TlBr can be volatilized at relatively low temperatures by resistive heating in a vacuum atmosphere, and may be suitable for manufacturing large-area detectors by vacuum deposition. In this study, polycrystalline TlBr films formed by vacuum deposition are annealed after deposition, and the effectiveness of annealing is evaluated by comparing the changes in properties before and after the treatment.