Presentation Information
[8a-N107-4]Evaluation of two-dimensional carrier transport properties of TlBr semiconductors based on signal shape analysis induced by pulsed laser irradiation
〇Yusuke Sugai1, Kenichi Watanabe1, Seishiro Tanaka1, Yusuke Kawai1, Mitsuhiro Nogami2, Keitaro Hitomi2 (1.Kyushu Univ., 2.Tohoku Univ.)
Keywords:
compound semiconductor,thallium bromide
TlBr is one of the compound semiconductors expected to be put to practical use as a gamma ray detector. To realize large, high-quality detectors, it is important to grow crystals with uniform charge transport characteristics. We have developed and improved a system to evaluate the two-dimensional distribution of charge carrier transport characteristics generated by irradiating the crystal surface with a pulsed laser. While previous evaluations focused primarily on mobility, we discussed the possibility of extracting characteristics related to crystallinity by conducting a detailed analysis of signal waveform shapes.