[8a-N307-1~9] 12.1 Fabrications and Structure Controls

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[8a-N307-4] Observation of Precursor Film Growth Behavior of Liquid Crystal C₈-BTBT-NHCOC₁₄H₂₉ in Different Liquid Crystal Phases

〇(M1)Shunya Sobue¹, Kohei Sambe¹, Keita Aizawa¹, Eita Shoji¹, Takashi Takeda², Shun Dekura^1,3, Tetsu Sato^1,3, Tomoyuki Akutagawa^1,3, Shingo Maruyama¹, Kenichi Kaminaga¹, Yuji Matsumoto¹ (1.Graduate School of Engineering,Tohoku Univ., 2.Shinshu Univ., 3.IMRAM, Tohoku Univ.)

Keywords:

precursor film,wetting phenomena,liquid crystal

We investigated the temperature dependence of the growth behavior of precursor films extending on a SiO₂/Si substrate surface in different liquid crystal phases of the organic semiconductor material C₈-BTBT-NHCOC₁₄H₂₉ , which exhibits two distinct smectic liquid crystal phases (SmE phase and SmC phase) depending on temperature. As a result, the growth of a precursor film with a thickness of approximately 5 nm was confirmed in both liquid crystal phases. However, it was found that the temperature dependence of the apparent diffusion coefficient of the precursor film, calculated from the time evolution of the precursor film length, differed significantly between the two liquid crystal phases.