[8p-N202-1~18] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)English Presentation

[8p-N202-12] Amorphous-Si Strip-Loaded Thin Film Lithium Niobate on Insulator Waveguides with Low Propagation Loss and Reduced Bending Radius

〇Moataz Eissa¹, Yoshitaka Ohiso¹, Kensuke Ogawa¹, Yuki Nemoto², Shoichiro Yamaguchi², Masahiko Namerikawa², Nobuhiko Nishiyama¹ (1.Science Tokyo, 2.NGK Insulators)

Keywords:

Si photonics,TFLN

Thin-film lithium-niobate-on-insulator (TFLN) combines large electro-optic, nonlinear, and acousto-optic coefficients with wafer-scale processing, enabling compact, high-performance photonic devices . Light guiding in TFLN circuits is commonly achieved by strip-loading, conventionally using SiN. We instead employ amorphous silicon (a-Si) as the loading strip. Finite-element analysis and loss measurements confirm that a-Si strip-loaded waveguides achieve low propagation loss while reducing bend-loss-limited radii, demonstrating the advantages of a-Si as a strip-loading material for compact, low-loss photonic circuits.