[8p-N203-1~11] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[8p-N203-4] Indium Tin Oxide-based Transparent Electrode Memristor for Integrated Photonic Phase Modulation on Silicon Nitride Platforms

〇(M2)Min Kang^1,2,3, Minsik Kong^1,2,3, Soo-Yeon Lee^1,2,3 (1.Elect. & Comp. Eng., 2.ISRC, 3.Seoul Nat'l Univ.)

Keywords:

Transparent RRAM,Optical Phase Modulation,Photonic Integration

This abstract presents a study on the development of a transparent ITO-based RRAM device monolithically integrated onto a Si₃N₄ waveguide for optical phase modulation. To address challenges such as interfacial instability and uncontrolled oxygen vacancy formation in ITO electrodes, O₂ annealing was applied, resulting in improved switching uniformity and electrical reliability. The device exhibited stable bipolar resistive switching with low forming voltage under a 10 μA compliance current. Optical simulations, including eigenmode and FDTD analyses, demonstrated effective index modulation induced by engineered Vo filaments in Al₂O₃ and HfO₂ layers, leading to measurable phase shifts in a Mach–Zehnder interferometer. The dual functionality of ITO as both an electrical contact and optical modulator enables compact photonic integration, suggesting the structure's potential as a phase-controlling element in photonic circuits.