[8p-N204-1~18] 3.11 Nanoscale optical science and near-field optics

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-N204-6] Ultraviolet Emission Enhancement of Ga₂O₃ and ZnO by Surface Plasmon Resonance of Al and Post Annealing

〇Kai Funato¹, Yuta Nozu¹, Tetsuya Matsuyama¹, Shunsuke Murai¹, Kenji Wada², Koichi Okamoto¹ (1.Osaka Metro. Univ., 2.OMU-ESCARI)

Keywords:

plasmonics,photoluminescence enhancement,ultraviolet

We have previously demonstrated that the ultraviolet emission of Ga₂O₃ can be enhanced via propagating surface plasmon resonance by depositing a thick Al film on Ga₂O₃ nano-hemispheres. In this study, we further increased the emission intensity by applying a post-annealing process to this structure. To investigate the broader applicability of this approach, we applied the same heat treatment to a structure consisting of an Al film deposited on a ZnO thin film, resulting in a remarkable 338-fold enhancement in luminescence intensity compared to that of pure ZnO.