[8p-N206-1~15] 3.12 Semiconductor optical devices

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[8p-N206-8] Optimization of the Multiplication Layer Thickness in ZnSe-Based Organic-Inorganic Hybrid UV APDs

〇Yuta Sakaguchi¹, Yamato Furukawa¹, Arisa Hirata¹, Shou Asai¹, Tomomi Wakahata¹, Tomoki Abe¹, Kazuaki Akaiwa¹, Kunio Ichino¹ (1.Tottori Univ.)

Keywords:

Avalanche photodiode,ZnSe,Organic-Inorganic Hybrid

The fabricated APDs have an organic-inorganic hybrid structure, consisting of a ZnSSe layer grown by MBE and a hole transport material, PEDOT:PSS, used as the window layer. Compared to UV APDs using other materials, these devices exhibit a low operating voltage of approximately 30V and a low dark current of around ~1pA/mm^2 just before breakdown.In this study, APD devices with a window layer edge protection process were fabricated with multiplication layer thicknesses of 0.4μm, 0.6μm, 0.7μm, and 0.9μm. By evaluating the device characteristics, the aim is to determine the optimal multiplication layer thickness.