[8p-N302-1~20] 17.3 Layered materials

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-N302-4] Layer-number dependence of topological Hall effect in vacuum-annealed Cr₃Te₄ films

〇(B)Daisuke Yamazaki¹, Keisuke Sato¹, Kanta Endo², Masaki Nakano¹ (1.Coll. of Eng., Shibaura Inst. of Technol, 2.Dept. of Appl. Phys. the Univ. of Tokyo)

Keywords:

van der Waals magnets,molecular beam epitaxy,topological Hall effect

Layered two-dimensional Cr_1+δTe₂ has attracted attention for spintronics applications and its nontrivial magnetism. We found that Cr₃Te₄ thin films grown by molecular beam epitaxy (MBE) exhibit topological Hall effect (THE) at room temperature and zero magnetic field after thermal annealing. In this presentation, we report the results of a systematic investigation on the layer-number dependence of THE using Cr₃Te₄ films with a thickness gradient, fabricated by employing a movable shutter during MBE growth.