[8p-N303-1~16] 10.2 Fundamental and exploratory device technologies for spin

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[8p-N303-12] Evaluation of Spin-Orbit Torque–Driven Magnetization Switching Using Phosphorus-Ion-Implanted Platinum

〇Kazuki Shintaku¹, Arun Jacob Mathew¹, Akihisa Iwamoto¹, Mojtaba Mohammadi², Hiroyuki Awano², Hironori Asada³, Yasuhiro Fukuma¹ (1.Kyushu Inst. Tech., 2.Toyota Tech. Inst., 3.Yamaguchi Univ.)

Keywords:

SOT-MRAM,Spin-orbit Torque,Spin Hall effect

Phosphorus-ion implantation was employed to enhance the spin Hall angle (θ_SHE) of platinum films, forming Pt(P) spin sources for spin-orbit-torque (SOT) switching in Gd₂₆Fe₇₄ ferrimagnetic layers. For implantation doses of 5 × 10¹⁶ and 10 × 10¹⁶ ions/cm, θ_SHE increased from 0.19 to 0.43. Under an in-plane assist field of 50 mT, the critical switching current density (J_sw) measured with 500 µs–500 ns write pulses decreased by 75 % while maintaining a thermal stability factor of Δ ≈ 60.