[8p-N303-1~16] 10.2 Fundamental and exploratory device technologies for spin

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[8p-N303-3] Electric field effect on anomalous Nernst effect in an FePt thin film

〇Soki Yoshida¹, Shimpei Ono², Bowen Qiang¹, Toshio Miyamachi¹, Masaki Mizuguchi¹ (1.Nagoya Univ., 2.Tohoku Univ.)

Keywords:

anomalous Nernst effect,electric field effect,ionic liquid

Recently, the anomalous Nernst effect (ANE) has attracted attention as an alternative thermoelectric conversion phenomenon to the Seebeck effect. By controlling the ANE, its potential for diverse applications can be expanded, for example, it leads to switching devices driven only by the temperature gradient. In this study, we investigated modulation of the ANE in an FePt thin film by the electric field effect. As a result, modulation of the Nernst voltage, Hall resistivity, and saturation magnetization was confirmed with gated voltage of +1.5 V.