[8p-N304-1~9] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-N304-1] Enhanced field-free current-induced magnetization switching by two-dimensional metastable MXene

Prabhat Kumar¹, Hitoshi Abe², 〇Shinji Isogami¹ (1.NIMS, 2.KEK)

Keywords:

Two-dimensional material,MXene,Spin-orbit torque

A magnetic memory device was fabricated using a MXene with a two-dimensional atomic-layered structure as the spin channel layer, and field-free magnetization switching was successfully demonstrated at a current density comparable to that of conventional W/CoFeB systems. In this study, in pursuit of further reduction in the current density required for field-free switching, symmetry manipulation via nitrogen sites was conducted. It was found that the switching current density is minimized at a composition shifted toward nitrogen-rich compared to the stoichiometric ratio. The control of light-element insertion sites in two-dimensional materials is expected to serve as a novel approach for spin torque modulation.