[8p-N306-1~20] 12.2 Characterization and Materials Physics

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[8p-N306-17] Field Dependence of Carrier Mobility with Contribution from Electron Transport Including Quantum Effects

〇Akira Ohno¹, Takenori Nitta², Jun-ichi Hanna³, Hiroaki Iino³ (1.NIT, Niihama College, 2.NIT, Tokyo College, 3.Science Tokyo)

Keywords:

organic semiconductor,electron tranfer,Gaussian disorder model

We evaluated the temperature and electric field dependence of electron transfer rates using the electron transfer theory proposed by Lin et al., which incorporates nuclear tunneling. Based on the obtained rates, we performed Kinetic Monte Carlo simulations using the Correlated Disorder Model (CDM). As a result, a larger energetic disorder was estimated compared to conventional CDM analysis. This discrepancy is attributed to the field dependence introduced by nuclear tunneling, which effectively enhances the apparent disorder.