[8p-N404-1~16] 11.1 Fundamental properties

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N404-10] Electrical Transport Measurements of La-doped Sr₃Co₂O₅Cl₂ under high pressure using DAC with Boron-doped Diamond Electrodes

〇Eiji Hitsuda^1,2, Masanori Nagao³, Hibiki Nagata^1,2, Ryo Matsumoto¹, Yoshihiko Takano^1,2 (1.NIMS, 2.Univ. of Tsukuba, 3.Univ. of Yamanashi)

Keywords:

superconductivity,high pressure,single crystal

We fabricated La-doped single crystals of Sr_3-xLa_xCo₂O₅Cl₂ and measured their electrical resistance under high pressure, aiming to induce metallization in Sr₃Co₂O₅Cl₂, a structural analogue of the high-temperature superconductor La₃Ni₂O₇. Although the material exhibited semiconducting behavior within the measured range, the La-doped samples, unlike the non-doped sample, showed a significant decrease in electrical resistance with increasing pressure. This result suggests that carrier doping is an effective strategy for promoting metallization in this system.