[8p-N404-1~16] 11.1 Fundamental properties

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[8p-N404-2] Gate control of Phases in La_1-xCe_xNiO₂ using Electric double-layer transistor

〇Sugata Koura¹, Hiroyoshi Nobukane², Masahito Sakoda¹ (1.Eng., Hokkaido Univ., 2.Sci., Hokkaido Univ.)

Keywords:

nickelate,Efros-Shkolvskii,Mott insulator

Recently, superconductivity was confirmed in nickelates by hole-doping. It was expected that superconductivity would be found in the electron-doped direction due to the similarity with cuprate. Therefore, our group performed electron doping by chemical substitution and confirmed the Mott and Efros-Shkolvskii phases. Following this, we have now prepared an electric double-layer transistor for the purpose of searching for and controlling the phases through pure carrier doping. In the presentation, we will report on the changes in physical properties using the transistor.