Presentation Information
[8p-P02-1]Scanning tunneling potentiometry on metal monolayer films formed on Si(111) at low temperature and under magnetic fields
〇Masayuki Hamada1, Masahiro Haze1, Junya Okazaki1, Yudai Sato2, Yukio Hasegawa1 (1.ISSP, the Univ. of Tokyo, 2.Leiden Institute of Physics, Leiden Univ)
Keywords:
scanning tunneling potentiometry,surface electrochemical potential measurement,surface electrical conductivity measurement
Scanning tunneling potentiometry (STP) enables us to image the topography and electrochemical potential distributions simultaneously at an atomic-scale spatial resolution and micro-volt-level potential sensitivity on the surface under a lateral current flowing parallel to the sample surface.
We have developed a low-temperature (LT) STP that can function in LT, where quantum phenomena are expected to emerge in the surface electrical conductivity. We performed STP measurements on a ~1 monolayer Pb reconstructed structure formed on a Si(111) substrate at LT and under magnetic field and found that there is a potential gradient perpendicular to the current direction under magnetic fields, suggesting that we can detect the Hall effect in nanometer scales.
We have developed a low-temperature (LT) STP that can function in LT, where quantum phenomena are expected to emerge in the surface electrical conductivity. We performed STP measurements on a ~1 monolayer Pb reconstructed structure formed on a Si(111) substrate at LT and under magnetic field and found that there is a potential gradient perpendicular to the current direction under magnetic fields, suggesting that we can detect the Hall effect in nanometer scales.