Presentation Information
[8p-P10-26]Effects of Hydroxyl Groups in Thermal Diffusion of Indium into ZnO Particles
〇(D)Abdul Md Halim1, Toshiyuki Yoshida1, Yasuhisa Fujita1 (1.Shimane University)
Keywords:
Thermal Diffusion,Indium doped ZnO NPs,Hydroxyl group
In contrast to conventional semiconductor thin films, employing nanoparticle-based coating techniques offers significant advantages in terms of flexible substrate selectivity and cost reduction in device fabrication. This approach enables the use of a broader range of substrate materials, including those incompatible with traditional semiconductor devices. In our laboratory, ZnO nanoparticle layers via spray coating and their application as channels in thin-film transistors (TFTs) [1,2] have been developed. While these particle-based layers demonstrate inherent semiconducting behavior, they suffer from exceedingly high sheet resistance (GΩ/sq order), which severely limits device performance. To address this challenge, we previously explored the thermal diffusion of gallium (Ga) and observed a significant improvement in electrical conductivity [3,4]. Building on this progress, the present study focuses on the thermal diffusion of indium (In) as an alternative dopant. This time, the effects of adding water vapor on the thermal diffusion on In into ZnO particles are reported.