[8p-P10-1~49] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices" | The 86th JSAP Autumn Meeting 2025

Session Details

Poster presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[8p-P10-1~49]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Sep 8, 2025 4:00 PM - 6:00 PM JST
Mon. Sep 8, 2025 7:00 AM - 9:00 AM UTC

P10 (Gymnasium)

[8p-P10-1]Temperature dependence on crystal growth of ZnO by mist CVD using tube furnace

〇Koki Kawabata¹, Reira Hirota¹, Tetsuya Kouno¹ (1.Shizuoka Univ.)

[8p-P10-2]Citric acid addition to raw material solution on ZnO crystal growth by mist CVD

〇Reira Hirota¹, Koki Kawabata¹, Tetsuya Kouno¹ (1.Shizuoka Univ.)

[8p-P10-3]Effect of deposition conditions on the crystal growth of NiO by Electrostatic Spray Deposition

〇Keisuke Shibata¹, Kanata Tanaka¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

[8p-P10-4]Effect of composition control on InGaZnO₄ thin films by Electrostatic Spray Deposition

〇Hiroki Maruyama¹, Kanata Tanaka¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

[8p-P10-5]Development of a Mist CVD system for fabrication of uniform thin film at high temperatures under atmospheric pressure

〇Toshiyuki Kawaharamura¹, Masahiko KOMATSU¹, Tatsuya YASUOKA¹, Htet Su WAI¹, Abhay Kumar MONDAL¹, Ryosuke OHASHI¹, Tatsuki OKADA¹, Yuya SATO², Hiroshi OHKUBO² (1.Kochi Univ. of Tech., 2.Toyo Tanso Co., Ltd.)

[8p-P10-6]Mist CVD Growth of κ-(In_xGa_1-x)₂O₃ on (111) 3C-SiC/Si templates

〇(M1)Misaki Nishikawa¹, Shunsuke Enoki¹, Yuma Tanaka¹, Masatoshi Koyama¹, Akihiko Fujii¹, Toshihiko Maemoto¹ (1.Osaka Inst. of Tech.)

[8p-P10-7]Effect of deionized water mist mixture on In₂O₃deposition using Mist CVD

〇Haruki Ishikawa¹, Tomohiro Yamaguchi¹, Ryo Ishikawa¹, Taro Izuka¹, Sinya Aikawa¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin univ.)

[8p-P10-8]Solid phase epitaxy of Sb-doped rutile GeO₂ thin films

〇(M1)Shohei Osawa¹, Yo Nagashima², Daichi Oka¹, Yasushi Hirose¹ (1.Tokyo Metropolitan Univ., 2.Univ. of Tokyo)

[8p-P10-9]Rock salt Ni_1-xZn_xO thin films grown by sol-gel method

〇Takashi Yasuda¹, Ryuto Miyakoshi¹, Shinji Nakagomi¹ (1.ISU)

[8p-P10-10]Sputtering deposition of SnO thin films on Si substrate: Dependence on Si crystal orientation

〇(M1C)Yoshikazu Shin¹, Aikawa Shinya¹ (1.Kougakuin Univ.)

[8p-P10-11]Annealing treatment of a stacked film for the fabrication of p-type amorphous TaSnO_x

〇(M1C)Yoshikazu Shin¹, Takahashi Tsukasa¹, Aikawa Shinya¹ (1.Kougakuin Univ.)

[8p-P10-12]Basic research on the formation and annealing of gallium oxide on sapphire substrates

〇Fuminobu Imaizumi¹, Takumi Morita¹ (1.NIT, Oyama)

[8p-P10-13]Mist CVD Growth of Cu-doped a-In₂O₃ and Its Electrical characterization

〇(M1)Tarou Iizuka¹, Ryo Ishikawa¹, Haruki Ishikawa¹, Hiroki Nagai¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin university)

[8p-P10-14]Theoretical investigation for structural stability of Ga₂O₃ on α-Al₂O₃(0001) substrate

〇koki Ishida¹, Akiyama Toru¹, Kawamura Takahiro¹ (1.Mie Univ.)

[8p-P10-15]Evaluation of Phase Transition and Crystal Orientation of Wurtzite Structure in Rocksalt-structured MgZnO Alloys

〇Kyosuke Tanaka¹, Kotaro Ogwaa¹, Tomohiro Yamaguchi¹, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ.)

[8p-P10-16]SIMS Analysis of Homoepitaxial MgO Films Grown by Mist CVD Method

〇Kotaro Ogawa¹, Kyosuke Tanaka¹, Tomohiro Yamaguchi¹, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ.)

[8p-P10-17]Investigation of buffer layers for the Growth of ε (κ)-Ga₂O₃ thin films by Mist CVD

〇Ryosuke Ohashi¹, Tatsuki Okada¹, Abhay Kumar Mondal¹, Htet Su Wai¹, Toshiyuki Kawaharamura^1,2 (1.Sys. Eng, 2.Res. Inst)

[8p-P10-18]Influence of Sb and Al doping on the crystal structure of ZnO thin films

〇Yutaka Adachi¹ (1.NIMS)

[8p-P10-19]Growth of single-crystalline ZnO layer by UHV sputter epitaxy method (III)

〇Haruto Ikeda¹, Kaito Horikoshi¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

[8p-P10-20]Electrical properties of β-Ga₂O₃ homoepitaxial films grown by PLD

〇Kazuki koreishi¹, Takuto Soma¹, Kohei Yoshimatsu¹, Akira Ohtomo¹ (1.Science Tokyo, Dept. Chem. Sci. Eng.)

[8p-P10-21]Structural changes of ZnO films on amorphous quartz glass by anneal at high temperatures

〇Keigou Maejima¹, Issa Kominato¹ (1.Kagoshima Univ.)

[8p-P10-22]NiO Growth on Different-Oriented β-Ga₂O₃ and Glass Substrates

〇(M1)Sunao Tateishi¹, Arihumi Okada¹ (1.Kyoto Inst. Tech.)

[8p-P10-23]Investigation of the effects of initial crystalline state during sputter-deposition and annealing temperature on the electrical and optical properties of Li-doped NiO thin films

〇Taisei Hattori¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

[8p-P10-24]Change in conduction type of NiO films by thermal annealing

〇Harunobu Yasuda¹, Takayuki Akiba¹, Hironobu Miyamoto², Kohei Sasaki², Tomohiro Yamaguchi¹, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.Novel Crystal)

English Presentation

[8p-P10-25]Deep-level traps in β-(Al_xGa_1-x)₂O₃ Schottky barrier diodes studied by deep level transient spectroscopy

〇(DC)Yun Jia¹, Hironori Okumura¹, Aboulaye Traore², Yui Sasaki¹, Kota Nakano¹, Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.Sorbonne Paris Nord Univ.)

English Presentation

[8p-P10-26]Effects of Hydroxyl Groups in Thermal Diffusion of Indium into ZnO Particles

〇(D)Abdul Md Halim¹, Toshiyuki Yoshida¹, Yasuhisa Fujita¹ (1.Shimane University)

[8p-P10-27]Study on the Li⁺ ion diffusion mechanism in mist-CVD a-TiO_x films

〇(M1)Fumiya Kobayashi¹, Koumei Yamamoto⁵, Kaien Ka⁵, Hajime Shirai^2,3, Hideki Kurihara⁴, Hirotaka Sone⁴, Tomomasa Sato², Toshinori Ohno⁵ (1.Kanagawa Univ., 2.Kanagawa Univ. RIE., 3.Saitama Univ. RIE, 4.SAITEC, 5.AMAYA CO., LTD)

[8p-P10-28]Characterization of SnSO₄ thin films (<10 nm) by an etch-back process

〇(M2)Kento Moriya¹, Sokichi Naganawa¹, Yukihiro Kudoh¹, Taiju Takahashi¹, Tomohiro Yamaguchi¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

English Presentation

[8p-P10-29]Annealing Effect on Carrier Conduction of Nitrogen-Doped ZnO Nanoparticle layers

〇(D)Shrestha Dey Monty¹, Yoshida Toshiyuki¹, Fujita Yasuhisa¹ (1.Shimane University)

[8p-P10-30]TEM observation of β-Ga₂O₃ grown by the OCCC method

〇Naoki Higuchi¹, Kazuki Ohnishi¹, Yongzhao Yao¹, Taketoshi Tomida², Koichi Kakimoto³, Masanori Kitahara², Kei Kamada^2,3, Kazuaki Akaiwa⁴, Akira Yoshikawa^2,3 (1.Mie Univ., 2.C&A Corporation, 3.Tohoku Univ., 4.Tottri Univ.)

[8p-P10-31]Observation of OCCC β-Ga₂O₃ single crystal by synchrotron X-ray topography

〇Koki Mizuno¹, Kazuki Ohnishi¹, Yongzhao Yao¹, Taketoshi Tomida², Koichi Kakimoto³, Masanori Kitahara², Kei Kamada^2,3, Kazuaki Akaiwa⁴, Akira Yoshikawa^2,3 (1.Mie Univ., 2.C&A Corporation, 3.Tohoku Univ., 4.Tottori Univ.)

[8p-P10-32]Measurement of Electric Properties of NiO/β-Ga₂O₃ Using Ga-In Electrodes

〇(M2)Yuto Nishi¹, Okada Arifumi¹ (1.Kyoto Inst. Tech)

[8p-P10-33]Thickness Dependence of Electronic States of Nanosheet Oxide Semiconductors at the Electrode-Oxide Interface

〇SUNBIN HWANG¹, Kota Sakai³, Takanori Takahashi², Mutsunori Uenuma¹, Shinji Migita¹, Yukiharu Uraoka², Masaharu Kobayashi³ (1.AIST, 2.NAIST, 3.IIS The Univ. Tokyo)

English Presentation

[8p-P10-34]The Enhancements of p-Type Semiconductor trends of Nitrogen-Doping ZnO: Role of Nitrogen and Oxygen Annealing

〇(M2)Abrarul Haque¹, Yumika Yamada¹, Shuhei Funaki¹, Yasuji Yamada¹ (1.Shimane University)

[8p-P10-35]Effect of Na Ion Addition on Ozone Reactivity of Solution-processed IGZO-TFTs

〇Kansai Yamako¹, Sasajima Hiroharu¹, Morimoto Takaaki¹, Keisuke Ishii¹ (1.NDA)

[8p-P10-36]Fabrication and optical transmittance properties of UV-transparent conductive films based on In-Al-O

〇Masaki Yasuda¹, Daichi Takeya¹, Kotaro Murata¹, Jumpei Kamikawa¹, Hiroko Kominami¹, Kazuhiko Hara¹, Akihiro Yamaji², Shunsuke Kurosawa² (1.Shizuoka Univ., 2.Tohoku Univ.)

[8p-P10-37]Fabrication of low-resistivity ZnO:Al films on glass substrates using Solid-Phase-Crystallized ZnON seed layers: Effects of crystallization degree of as-deposited seed layers

〇Yoshiharu Wada¹, Wenrui Xie¹, Naoto Yamashita¹, Takamasa Okumura¹, Kunihiro Kamataki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

[8p-P10-38]EffectImprovement of annealingtransparent temperatureconductivity onof Zr-doped ZnO transparent conducting thin films

〇kosuke Matsumoto¹, Ichiro Takano² (1.Grad School, Kogakuin Univ., 2.Kogakuin Univ.)

[8p-P10-39]Vacuum Annealing Time Dependence of the Properties of Zn + N co-doped ZnO Films

〇Haruki Ohmori¹, Abrarul Haque¹, Yumika Yamada^1,2, Shuhei Funaki¹, Yasuji Yamada¹ (1.Shimane Univ., 2.Kobelco Res. Inst. Inc.)

[8p-P10-40]Charging effect of ZnO and Ga₂O₃particles on Ga thermal diffusion into ZnO particles

〇(M2)Yuusuke Kawai¹, Toshiyuki Yoshida¹, Yasuhisa Fujita¹ (1.Shimane Univ Natural science)

[8p-P10-41]Fabrication and characterization of top-gate InGaO thin-film transistors using aqueous precursor solutions with an excimer light irradiation processing

〇Hideya Ochiai¹, Kazuki Ueda¹, Takuya Nomura¹, Akira Fujimoto¹, Hideo Wada¹, Masatoshi Koyama¹, Akihiko Fujii¹, Akihiro Shimizu², Noritaka Takezoe², Hiroyasu Ito², Toshihiko Maemoto¹ (1.Osaka Inst. of Tech., 2.Ushio Inc.)

[8p-P10-42]Effect of Oxidation Annealing on Amorphous p-type TeO_X Thin-Film Transistors

〇Kazuho Ishi¹, Yoshikazu Shin¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

[8p-P10-43]Effect of Electroforming on Switching Behavior in SiO_x ReRAM with ITO Electrodes

〇(M1C)Yuito Makishima¹, Kento Moriya¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

[8p-P10-44]Effect of RF power and deposition pressure on crystallinity and leakage current properties of HfO₂ thin films

〇Taiyo Shinoda¹, Hidenori Kawamura^1,2, Mutsumi Kimura¹ (1.Ryukoku Univ., 2.IMPR Center)

[8p-P10-45]Dependence of Electrical Characteristics on the Thickness of the Resistive Switching Layer in Ga-Sn-O Memristors

〇Ryusei Hagihara¹, Tokiyoshi Matsuda^1,2, Hidenori Kawanishi², Mutsumi Kimura^2,3 (1.Kindai Univ., 2.IMPR Center, 3.Ryukoku Univ.)

[8p-P10-46]Characteristics comparison between Ti and ITO electrodes in n-type α-Ga₂O₃

〇Yugo Yamaguchi¹, Kotono Yamada¹, Soma Nishio¹, Ryuma Iida¹, Shinya Aikawa¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ.)

[8p-P10-47]Fabrication and characterization of deep ultraviolet photodetectors using amorphous GaO_x thin-films deposited on quartz glass substrates

〇Shunsuke Enoki¹, Iori Yamasaki¹, Misaki Nishikawa¹, Masatoshi Koyama¹, Akihiko Fujii¹, Toshihiko Maemoto¹ (1.Osaka Inst. of Tech.)

[8p-P10-48]Effect of Applying Voltage to the Back of the Substrate on Current Flow in ZnGa₂O₄ Polycrystalline Thin Films

〇(M1)Yuya Oguma¹, Reiya Kase¹, Tomoki Iitsuka¹, Yasuharu Ohgoe¹, Kazunuki Yamamoto², Satoshi Ishii¹ (1.Tokyo Denki Univ., 2.Chiba Univ.)

[8p-P10-49]Impact of non-thermal post-processes on NiO-based transparent TFTs on flexible substrates

〇Yoshiki Matsubayashi¹, Taisei Hattori¹, Yuna Koide¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

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