Presentation Information
[8p-P10-29]Annealing Effect on Carrier Conduction of Nitrogen-Doped ZnO Nanoparticle layers
〇(D)Shrestha Dey Monty1, Yoshida Toshiyuki1, Fujita Yasuhisa1 (1.Shimane University)
Keywords:
ZnO Nanoparticles,Thermal Annealing,Electronic Devices
The use of semiconducting particle layers instead of thin films is gaining attention in the field of semiconductor processing because of its large area compatibility, low processing costs, and wider selectivity on substrates such as flexible and/or bendable materials. Both n-type and p-type conduction in particle channel layers are necessary for the implementation of CMOS logic circuits employing thin film transistors (TFTs). The previous studies in our lab demonstrated both n- and p-channel TFT operations using ZnO particle layers on quartz substrates [1]. However, degradation of device performance by extremely high sheet resistance has been preventing their practical use. For p-type conduction, our lab has developed a unique synthesis technique to produce p-type ZnO nanoparticles (NPs) by nitrogen doping [2]. It has already been reported that thermal annealing can improve the p-type conductivity [3]. In this study, the effect of thermal annealing on p-type ZnO NPs under different gases atmosphere was observed.