[8p-S102-1~9] Korea-Japan Applied Physics Symposium "quantum materials & devices and advanced semiconductors"

4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)English Presentation

[8p-S102-7] Contact Engineering in Atomically Thin 2D Electronics

〇Sangyeon Pak¹ (1.Hongik University)

Keywords:

2D Electronics,Contact Engineering,2D Semiconductors

Two-dimensional (2D) semiconductors have rapidly gained attraction as next-generation channel materials for ultra-scaled electronics, owing to their exceptional electrostatic control and atomic-level thickness. Despite their promising characteristics, high contact resistance and Fermi-level pinning (FLP) at the metal–semiconductor interface still pose significant obstacles to achieving optimal device performance and scalability. In this presentation, I will highlight the lastest breakthroughs in contact engineering ranging from van der Waals (vdW) metal transfer, semimetallic and edge contacts, and contact doping to strain engineering and self-healing electrodes that collectively improve carrier injection, lower Schottky barrier, and enhance interface stability. These advances provide new insights in designing next-generation devices based on 2D semiconductors.