[8p-S102-1~9] Korea-Japan Applied Physics Symposium "quantum materials & devices and advanced semiconductors"

5:00 PM - 5:30 PM JST(8:00 AM - 8:30 AM UTC)English Presentation

[8p-S102-8] Fabrication of transfer-free graphene FETs utilizing the catalyst metal agglomeration technique with fine Ni patterns

〇Toshiharu Kubo¹, Naoyuki Sasada¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Nagoya Inst. Tech.)

Keywords:

Graphene,FET,Metal agglomeration technique

In this study, we have fabricated transfer-free graphene FETs utilizing the agglomeration phenomenon of catalyst metals. By forming and thermally annealing fine Ni patterns on sapphire substrates, few-layer graphene with good crystallinity was self-organized near the Ni patterns. We confirmed good ohmic characteristics through the graphene and evaluated the electrical properties of the graphene FETs.