Presentation Information
[9a-N105-7]Rare-Metal-Free Solution-Processed Source-Gated Transistors via Argon Plasma-induced Contact Optimization
〇(D)Mark Denusta Ilasin1, Juan Paolo Soria Bermundo1, Pongsakorn Sihapitak1, Candell Grace Paredes Quino1, Magdaleno Jr. Rigodon Vasquez2, Senku Tanaka3, Hidenori Kawanishi1, Yukiharu Uraoka1 (1.NAIST, 2.UPD, 3.Kindai Univ.)
Keywords:
argon plasma,source-gated transistor,solution-process
As demand grows for sustainable, energy-efficient solutions in Society 5.0's ubiquitous systems, as well as in healthcare and agricultural applications, conventional thin-film transistors (TFTs) face scalability and performance limitations. Source-gated transistors (SGTs) overcome these challenges by utilizing Schottky diodes for rapid current saturation, enabling stable low-voltage operation with reduced signal distortion, making them ideal for real-time monitoring and IoT applications. This study revealed a novel structure and method for producing alternative and effective Schottky-gated transistors (SGTs). This was achieved by selectively tuning the semiconductor channel beneath the source region through argon (Ar) plasma treatment. Ar plasma treatment adjusts the channel's Fermi energy, altering the semiconductor's work function to create an appropriate Schottky barrier at the metal-semiconductor interface. This novel approach of selective Ar plasma treatment beneath the source region enabled SGT fabrication with standard ohmic contacts for both electrodes, demonstrating early current saturation in the output curves and simplified processing compared to conventional methods requiring specialized Schottky source metals.