Session Details

[9a-N105-1~10]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 9, 2025 9:00 AM - 11:45 AM JST
Tue. Sep 9, 2025 12:00 AM - 2:45 AM UTC
N105 (Lecture Hall North)

[9a-N105-1]Evaluation of electrical transport properties of large single crystals of InGaO3(ZnO)4

〇(M2)Momoka Hirai1, Ryotaro Kokai1, Takumi Takahashi1, Taiki Kouyama1, Tadahito Inoue1, Naoki Kase1, Ryoto Yanagisawa1, Nobuaki Miyakawa1 (1.Tokyo Univ. of Sci)

[9a-N105-2]Depth profiling of the electronic structure of Bulk sigle-crystalline InGaZnO4 using hard X-ray photoemission spectroscopy

〇Gimpei Tabata1, Ryoya Yamagishi1, Yasutaka Sawata1, Yusuke Kawamura1, Yuto Uruma1, Tadahito Inoue1, Kento Ishigaki1, Naoki Kase1, Akira Yasui2, Jiayi Tang2, Nobuaki Miyakawa1, Tomohiko Saitoh1 (1.Tokyo Univ. of Sci., 2.JASRI)

[9a-N105-3]Hard X-ray photoemission spectroscopy of InGaZn2O5 bulk single crystals

〇Ayumi Kobayashi1,2, Ryoya Yamagishi2, Yasutaka Sawata2, Kento Ishigaki1,2, Yusuke Kawamura1, Yuto Uruma1, Tadahito Inoue1, Momoka Hirai2, Naoki Kase1,2, Akira Yasui3, Jiayi Tang3, Nobuaki Miyakawa1,2, Tomohiko Saitoh1,2 (1.Tokyo Univ. of Sci.B, 2.Tokyo Univ. of Sci.AP, 3.JASRI)

[9a-N105-4]Micro-focused angle-resolved photoemission spectroscopy on single-crystalline InGaZnO4

〇Yoichi Nambu1, Kosuke Otani1, Yasutaka Sawata1, Yusuke Kawamura1, Yuto Uruma1, Tadahito Inoue1, Kento Ishigaki1, Naoki Kase1, Kenichi Ozawa2, Nobuaki Miyakawa1, Tomohiko Saitoh1 (1.Tokyo Univ. of Sci., 2.KEK PF)

[9a-N105-5]Oxygen Partial Pressure Dependence on Properties of p-type SnO Thin Films by Sputtering Deposition

〇Tomoki Otani1, Masaki Ando1, Yuta Ito1,2, Tappei Nishihara3,4, Atsushi Ogura1,3 (1.School of Sci and Technol., Meiji Univ., 2.JSPS Fellow Research, 3.MREL, 4.JASRI)

[9a-N105-6]Investigation of Carrier Transport Mechanism of Rare Metal-Free Oxide Thin-Film Transistors

〇Keizo Kashiba1, Juan Paolo S. Bermundo1, Yusaku Magari2,3, Candell Grace P. Quino1, Hiromichi Ohta3, Yukiharu Uraoka1 (1.NAIST, 2.Kochi Tech, 3.RIES-Hokudai)

[9a-N105-7]Rare-Metal-Free Solution-Processed Source-Gated Transistors via Argon Plasma-induced Contact Optimization

〇(D)Mark Denusta Ilasin1, Juan Paolo Soria Bermundo1, Pongsakorn Sihapitak1, Candell Grace Paredes Quino1, Magdaleno Jr. Rigodon Vasquez2, Senku Tanaka3, Hidenori Kawanishi1, Yukiharu Uraoka1 (1.NAIST, 2.UPD, 3.Kindai Univ.)

[9a-N105-8]ALD-Based Sn-Doped InGaZnO FETs with Reliability Enhancement

〇(D)Sunghun Kim1, SunHong Choi1, Kota Sakai1, Takuya Saraya1, Toshiro Hiramoto1, Masaharu Kobayashi1,2 (1.IIS, The Univ. of Tokyo, 2.d.lab, The Univ. of Tokyo)

[9a-N105-9]Small Data Machine Learning for Deposition Condition of Mo-doped In2O3 Transparent Conducting Films

〇(M1)Oga Hayashi1, Naoomi Yamada1 (1.Chubu Univ.)

[9a-N105-10]Suppression of optical absorbance of transparent electrode for semi-transparent perovskite solar cells by changing deposition process

〇Shohei Ryo1, Hirotaka Sano1, Yayoi Nemoto1, Ryo Sato1, Xiao Liu1 (1.Kyocera Corp.)