[9a-N201-1~10] 6.1 Ferroelectric thin films

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N201-1] Domain structure control in Pb(Zr, Ti)O₃ thin films via lattice strain from underlying bottom electrode layers

〇(D)MIKI NAKAHATA¹, KEISUKE ISHIHAMA², YOSHITAKA EHARA³, TAKAO SHIMIZU⁴, LINGLING XIE⁵, DAISUKE KAN⁵, TOMOAKI YAMADA⁶, KAZUKI OKAMOTO¹, HIROSHI FUNAKUBO¹ (1.Sci. Tokyo, 2.Tokyo Tech., 3.NDA, 4.NIMS, 5.Univ. Kyoto, 6.Nagoya Univ.)

Keywords:

domian structure control,PZT thin films,La-SrSnO3 thin films

A systematic study of domain structures with controlled in-plane strain and orientation is essential for detailed understanding of the non-180° domain switching mechanism in Pb(Zr_x, Ti_1-x)O₃ (PZT) films. However, stabilizing the a-domain with in-plane polarization requires tensile strain, and perovskite-structured underlayers capable of providing such strain have been limited. In this study, La-SrSnO₃ (LSSO) was employed as the bottom electrode to introduce tensile strain into the PZT films. We successfully formed an a-domain structure in PZT thin films with thicknesses below the critical thickness (~40 nm) fabricated on LSSO.