[9a-N205-1~10] 13.8 Optical properties and light-emitting devices

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)English Presentation

[9a-N205-1] High External Quantum Efficiency of 0.51% in 232 nm AlGaN-based far-UVC LED by Swapping from Heteroepitaxy to Homoepitaxy

〇(P)Muhammad Nawaz Sharif¹, Kohei Fujimoto^1,3, Arata Sasaki^1,3, Hiromitsu Sakai², Hiroyuki Yaguchi³, Muhammad Ajmal Khan¹, Hideki Hirayama¹ (1.Quantum Optodevice Labortory RIKEN Cluster for Pioneering Research, 2.Shin-Etsu Chemical Co., Ltd. Japan, 3.Saitama University)

Keywords:

III-V nitrides semiconductors