Presentation Information
[9a-N205-4]Dependence of light output on Si concentration of deep-UV LEDs with Si-doped quantum well structures
〇Marina Fujita1, Takeuchi Tetsuya1, Kamiyama Satoshi1, Iwaya Motoaki1, Ishiguro Hisanori1, Takehisa Teppei1, Muto Hibiki1, Miura Sena1, Takase Kenta1 (1.Meijo Univ)
Keywords:
deep UV LED
This study investigates the dependence of light output on silicon (Si) doping concentration in deep ultraviolet (UV) LEDs incorporating AlGaN quantum well (QW) active layers. Six types of samples were fabricated by varying both the Si concentration and doping location (either in the QW or barrier layers), and their emission characteristics at 280 nm were analyzed. The samples included undoped, barrier-doped (5.0×1017 and 1.5×1018 cm-3), and QW-doped (5.0×1017, 1.5×10
18 and 4.5×1018 cm-3) configurations. The results showed that all doped samples exhibited equal or higher light output compared to the undoped sample. Notably, doping Si at a concentration of 5.0×1017 cm-3 into the barrier layer resulted in the highest light output, approximately 1.3 times greater than that of the undoped LED. These findings indicate that optimizing both the Si concentration and its placement within the active region can significantly enhance emission performance. Further studies are planned to explore the effects of higher and lower Si concentrations.
18 and 4.5×1018 cm-3) configurations. The results showed that all doped samples exhibited equal or higher light output compared to the undoped sample. Notably, doping Si at a concentration of 5.0×1017 cm-3 into the barrier layer resulted in the highest light output, approximately 1.3 times greater than that of the undoped LED. These findings indicate that optimizing both the Si concentration and its placement within the active region can significantly enhance emission performance. Further studies are planned to explore the effects of higher and lower Si concentrations.