Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-N323-8]Reducing bonding resistance between p-InGaAs and n-InGaAs using room temperature wafer bonding method

〇Shuto Fujiwara¹, Shuntaro Fujii¹, Keigo Saito¹, Moeka Chiba¹, Yuto Kaneko¹, Gin Hirano¹, Ryoga Kakiuchi¹, Kenta Mutsuzaki¹, Kouichi Akahane², Shiro Uchida¹ (1.Chiba Tech., 2.NICT)

Keywords:

compound semiconductor solar cell

In this study, we investigated the irradiation conditions of fast atom beam (FAB) such as irradiation time and applied current in order to reduce the resistance of p-InGaAs//n-InGaAs junctions. The experimental results showed that ohmic-like bonding was obtained for all samples when the applied current was changed, and the junction interface resistance was 0.65 Ωcm2 at an applied current of 75 mA. This is thought to be due to the decrease in junction interface resistance caused by tunneling current via defect levels at the junction interface.

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