Presentation Information
[9a-P03-5]Surface Structure Analysis of a-MnTe Obtained by High Temperature Deposition
〇Shogo Kakimoto1,2, Shota Awaduhara1,2, Masashi Kuwahara2, Kunio Okimura3, Joe Sakai4, Satoshi Katano1 (1.Toyo Univ., 2.AIST, 3.Tokai Univ., 4.Toshima Mfg. Co.,Ltd)
Keywords:
MnTe,phase transition material,XRD
MnTe has attracted attention as a phase transition material that undergoes phase transitions between multiple crystalline phases upon external stimulation. The phase transition is expected to be applied to phase-change memory because of the resistance change that accompanies the phase transition. When deposited at room temperature, β-phase MnTe (β-MnTe) is obtained, and α-phase MnTe (α-MnTe) is obtained by heating. Since the volume shrinks by 20% with the phase change, the resulting α-MnTe thin film is non-uniform. It was found that deposition of MnTe on a high-temperature substrate results in a uniform α-MnTe thin film. In this presentation, we report the results of XRD and SEM characterization of MnTe thin films obtained by thermal deposition.
Comment
To browse or post comments, you must log in.Log in