Presentation Information
[9a-P03-5]Surface Structure Analysis of a-MnTe Obtained by High Temperature Deposition
〇Shogo Kakimoto1,2, Shota Awaduhara1,2, Masashi Kuwahara2, Kunio Okimura3, Joe Sakai4, Satoshi Katano1 (1.Toyo Univ., 2.AIST, 3.Tokai Univ., 4.Toshima Mfg. Co.,Ltd)
Keywords:
MnTe,phase transition material,XRD
MnTe has attracted attention as a phase transition material that undergoes phase transitions between multiple crystalline phases upon external stimulation. The phase transition is expected to be applied to phase-change memory because of the resistance change that accompanies the phase transition. When deposited at room temperature, β-phase MnTe (β-MnTe) is obtained, and α-phase MnTe (α-MnTe) is obtained by heating. Since the volume shrinks by 20% with the phase change, the resulting α-MnTe thin film is non-uniform. It was found that deposition of MnTe on a high-temperature substrate results in a uniform α-MnTe thin film. In this presentation, we report the results of XRD and SEM characterization of MnTe thin films obtained by thermal deposition.