Presentation Information
[9a-P07-6]Quantum sensing under high-temperature and high-pressure conditions using boron doped diamond circuit
〇(PC)Masahiro Ohkuma1, Ryo Matsumoto2, Shinobu Onoda3, Kenji Ohta1, Yoshihiko Takano2, Keigo Arai1 (1.Science Tokyo, 2.NIMS, 3.QST)
Keywords:
quantum sensing,high pressure
Negatively charged nitrogen–vacancy (NV) centers—point defects in diamond—retain quantum coherence even under high temperatures and high pressures, making them promising probes for quantum sensing in extreme environments. However, NV-based sensing under simultaneously high-temperature and high-pressure conditions has not yet been achieved. In this study, we performed optically detected magnetic resonance under such extreme conditions by combining a diamond anvil cell with a boron-doped diamond circuit.