Presentation Information
[9a-S102-5]Construction of lateral thermoelectric devices using pn-doped single-walled carbon nanotube films
〇Naoki Tanaka1,2, Yuichiro Kurokawa3, Masayuki Murata4, Hiromi Yuasa3, Tsuyohiko Fujigaya1,2,5 (1.Grad. Sch. Eng., Kyushu Univ., 2.I2CNER, 3.ISEE, Kyushu Univ., 4.AIST, 5.CMS)
Keywords:
single-walled carbon nanotube,thermoelectric conversion,doping
Lateral thermoelectric conversion, in which electric current flows perpendicular to the heat flux, is expected to achieve high thermoelectric conversion efficiency due to its excellent heat recovery performance and minimal contact resistance. However, its practical application has been limited because it typically requires magnetic materials, special crystal structures, or external magnetic fields. In this study, we successfully constructed a lateral thermoelectric device using a single pn-doped single-walled carbon nanotube film, and we report our evaluation of its operating mechanism.