Presentation Information
[9p-N107-6]Control of optical, electrical and thermal properties of the thin films by metal-semiconductor phase-change caused by hydro-/dehydrogenation reactions (1): Electrical and thermal conductivities of transparent conductive films and thermal switches.
〇Yuzo Shigesato1 (1.Aoyama Gakuin Univ.)
Keywords:
metal-semiconductor phase change,switchable mirror film,thermal switch
The electrical conductivity of various transparent conducting oxides (TCOs) can be controlled over a range of several orders of magnitude by tuning the deposition conditions, and the thermal conductivity of these TCO films by the TDTR method can be understood as being due to free electrons as estimated by the Wiedmann-Franz (WF) rule, and phonons. The thermal conductivity can be understood as due to free electrons estimated by the WF rule, and phonons. Although these electrical/thermal properties cannot be reversibly controlled after film deposition, we have been working on the fabrication of thin films and electrical/thermal control devices in which optical, electrical, and thermal properties can be controlled over a large range by using materials that undergo a reversible phase change between metal and semiconductor due to temperature change or hydro-/dehydrogenation reactions. In the area of temperature control,VO2 thin films that undergo a metal-insulator phase transition near room temperature, and on Sm, Gd, Y-Mg, Ni-Mg, and Ti-Mg, which are Pt-catalyzed switchable mirror materials by hydro-/dehydrogenation reactions, will be reported.