[9p-N202-1~17] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[9p-N202-6] Influences of Well Layer Thickness on EL Properties for SiGe/Ge Multi Quantum Well LEDs

〇Mayu Aikawa¹, Shuya Kikuoka¹, Michihiro Yamada¹, Hamaya Kohei^2,3,4, Sawano Kentarou¹ (1.Tokyo City Univ., 2.Grad. Sch. Eng. Sci., The Univ. of Osaka., 3.CSRN, The Univ. of Osaka., 4.OTRI, The Univ. of Osaka.)

Keywords:

SiGe,LED,MQW