Presentation Information
[9p-P08-1]Growth and fundamental property characterization of Ga-doped CdTe single crystals by THM for radiation detector applications
〇Hayato Tsuru1, Akira Nagaoka1, Isshin Sumiyoshi2, Yoshitaro Nose2, Kenji Yoshino1 (1.Miyazaki Univ., 2.kyoto Univ.)
Keywords:
radiation detector,crystal growth,CdTe
Ga-doped CdTe single crystals were grown by THM method, and their structural and electrical properties were characterized. In particular, 0.1 mol% doped CdTe exhibited a high resistivity of approximately 107Ω cm, suggesting that n-type carriers are suppressed by self-compensation, indicating the material’s potential to meet the high-resistivity requirements for radiation detector applications.