Presentation Information
[9p-P13-1]Growth of SiC Single Crystals by the Resistive Heating PVT method
〇Gyeongjun Song1, Hajun Kim1, Nakyeoung Kim1, Daeuk Kim1, Chanho Park1, Miseon Park1, Kwanghee Jung1, Junggon Kim1, Wonjae Lee1 (1.Dong-Euni Univ. for Dong-Eui University)
Keywords:
Silicon carbide,PVT method,resistive heating
Silicon carbide (SiC) semiconductors are attracting significant attention as substrate materials for power devices that operate under extreme conditions and the development of high-quality SiC single crystals has become increasingly important [1]. Physical vapor transport (PVT) is the most widely adopted method for growing SiC single crystals. However, the conventional PVT growth method, which employs inductive heating, often suffers from non-uniform thermal fields. Compared to inductive heating, resistive heating enables more precise control of the thermal field by allowing modifications to the graphite heater design [2,3]. In this study, we investigated, for the first time, the growth of 4-inch SiC crystal using the resistive heating PVT method. Crystal growth was conducted at a temperature of 2100 °C in a 5 kPa Ar atm. The crystal quality of the obtained SiC crystal were characterized using both high-resolution X-ray diffraction (HRXRD) and Raman scattering measurements.