Session Details
[9p-P13-1~3]15.6 Group IV Compound Semiconductors (SiC)
Tue. Sep 9, 2025 4:00 PM - 6:00 PM JST
Tue. Sep 9, 2025 7:00 AM - 9:00 AM UTC
Tue. Sep 9, 2025 7:00 AM - 9:00 AM UTC
P13 (Gymnasium)
[9p-P13-1]Growth of SiC Single Crystals by the Resistive Heating PVT method
〇Gyeongjun Song1, Hajun Kim1, Nakyeoung Kim1, Daeuk Kim1, Chanho Park1, Miseon Park1, Kwanghee Jung1, Junggon Kim1, Wonjae Lee1 (1.Dong-Euni Univ. for Dong-Eui University)
[9p-P13-2]Relief of residual stress and reduction of defect density in SiC crystals by seed adhesion using carbon-based adhesive and graphite foil
〇Nakyeoung Kim1, Gyeongjun Song1, Daeuk Kim1, Chanho Park1, Miseon Park1, Kwanghee Jung1, Junggon Kim1, Wonjae Lee1 (1.Dong-Eui Univ. for Dong-Eui University)
[9p-P13-3]Step unbunching phenomenon of 4° off-axis 4H-SiC substrate surface
〇(M2)Maho Shimizu1, Wataru Norimatsu1 (1.Waseda Univ.)