Presentation Information
[9p-P13-2]Relief of residual stress and reduction of defect density in SiC crystals by seed adhesion using carbon-based adhesive and graphite foil
〇Nakyeoung Kim1, Gyeongjun Song1, Daeuk Kim1, Chanho Park1, Miseon Park1, Kwanghee Jung1, Junggon Kim1, Wonjae Lee1 (1.Dong-Eui Univ. for Dong-Eui University)
Keywords:
Silicon carbide,Seed adhension,coefficient of thermal expansion
Silicon Carbide (SiC) has a wide band gap, excellent thermal conductivity, resulting in stable device
performance in high-temperature and high-voltage environments. Among various methods for growing SiC
single crystals, the physical vapor transport (PVT) method is currently the most widely used commercial
technology due to ability to produce large-diameter SiC single crystals. [1] However, the PVT method
involves numerous parameters whose precise control determines final crystal quality. Among these, seed
adhesion plays a critical role in the process. This step involves bonding the seed crystal to the graphite
crucible plate using specialized adhesive. Challenges such as uneven adhesive coating or bubble formation
during adhesion can lead to reverse growth patterns during crystallization or, in severe case, complete seed
detachment. Additionally, the inherent mismatch in the coefficient of thermal expansion (CTE) between the
seed crystal and the graphite plate induces residual stress and initial defects during the early growth stages.
[2]
To address these issues, this study proposes a seed adhesion structure utilizing a carbon-based adhesive
and either a single layer of graphite foil. The residual stain and stress in the obtained SiC crystals were characterized using both
high-resolution X-ray diffraction (HRXRD) and Raman scattering measurements.
performance in high-temperature and high-voltage environments. Among various methods for growing SiC
single crystals, the physical vapor transport (PVT) method is currently the most widely used commercial
technology due to ability to produce large-diameter SiC single crystals. [1] However, the PVT method
involves numerous parameters whose precise control determines final crystal quality. Among these, seed
adhesion plays a critical role in the process. This step involves bonding the seed crystal to the graphite
crucible plate using specialized adhesive. Challenges such as uneven adhesive coating or bubble formation
during adhesion can lead to reverse growth patterns during crystallization or, in severe case, complete seed
detachment. Additionally, the inherent mismatch in the coefficient of thermal expansion (CTE) between the
seed crystal and the graphite plate induces residual stress and initial defects during the early growth stages.
[2]
To address these issues, this study proposes a seed adhesion structure utilizing a carbon-based adhesive
and either a single layer of graphite foil. The residual stain and stress in the obtained SiC crystals were characterized using both
high-resolution X-ray diffraction (HRXRD) and Raman scattering measurements.