[10a-A23-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-A23-10] Temperature dependence of circularly polarized photoluminescence properties of dilute nitride GaInNAs/GaAs multiple quantum wells

〇Eita Tagawa¹, Ayano Morita¹, Hiroto Kise¹, Keisuke Minehisa², Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1.IST,Hokkaido Univ., 2.RCIQE,Hokkaido Univ.)

Keywords:

dilute nitride semiconductor,photoluminescence,electron spin polarization