[10a-A23-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy | The 87th JSAP Autumn Meeting 2026

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Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[10a-A23-1~12]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 10, 2026 9:00 AM - 12:15 PM JST
Thu. Sep 10, 2026 12:00 AM - 3:15 AM UTC

A23 (Faculty of Info. Sci. & Tech. Bldg.)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-A23-1]Self-assembly of InAs quantum dots on metamorphic InAlAs/GaAs (111)A with high Al content

〇Takaaki Mano¹, Akihiro Ohtake¹, Nikita Kulesh¹, Anton Bolyachikin¹, Takuya Kadohira¹, Nobuyuki Ishida¹, Yusuke Hayashi¹, Takashi Kuroda¹ (1.NIMS)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-A23-2]Band offsets in polarity-controlled GaAs/Ge/GaAs Heterostructures

〇Akihiro Ohtake¹, Takaaki Mano¹, Nobuyuki Ishida¹, Kazutaka Mitsuishi¹, Yusuke Hayashi¹, Yuma Yamagishi², Jun Nakamura² (1.NIMS, 2.UEC-Tokyo)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-A23-3]Transport Properties of InAs 2-Dimensional Electron Systems Grown via Interfacial Misfit Buffer Layer on GaAs Substrates

〇Takafumi Akiho¹, Yusuke Nakazawa¹, Hiroshi Irie¹, Norio Kumada¹, Koji Muraki¹ (1.NTT BRL)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-A23-4]Evaluation of In-Plane Crystallinity Inhomogeneity in HVPE-Grown InGaP Buffer Layers on GaAs Substrates Using Reciprocal Space Mapping

〇Ryuta Yamamoto¹, Naoki Hashimoto¹, Ryuji Oshima², Takeyoshi Sugaya², Hidetoshi Suzuki¹ (1.MIyazaki Univ., 2.AIST)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[10a-A23-5]Evaluation of in-plane non-uniformity of the nitrogen distribution in GaAsN/GaAs superlattice thin films grown by atomic layer epitaxy

〇Yuji Horiba¹, Toranosuke Takeo¹, Hayato Koto¹, Masahiro Kawano², Hidetoshi Suzuki¹ (1.Miyazaki Univ., 2.Toyota Technological Inst.)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[10a-A23-6]Effects of Porosity and Pore Depth in Porous Si Substrates on the Surface of
GaAs Thin Film Growth

〇Ryo Yoshitomi¹, Momoko Sakuma¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[10a-A23-7]Molecular Beam Epitaxial Growth of GaAs/BiSb Heterostructures

〇Jin Kawase^1,2, Kaito Nakama^1,2, Fumitaro Ishikawa² (1.Hokkaido Univ. IST, 2.Hokkaido Univ. RCIQE)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-A23-8]Enhanced thermoelectric performance of polycrystalline InAs thin films via solid-phase crystallization of amorphous precursors

〇Yutaka Kiyono¹, Koki Nozawa¹, Seo Jisol¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Tsukuba Univ.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[10a-A23-9]Intrinsic Step Jamming in Surface Kinetics of the KPZ-like Rough Surfaces and Methods for Avoiding It

〇Noriko Akutsu^1,2, Yoshihiro Kangawa³ (1.Osaka Electro-Com., 2.Kyoto Univ., 3.RIAM Kyushu Univ.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-A23-10]Temperature dependence of circularly polarized photoluminescence properties of dilute nitride GaInNAs/GaAs multiple quantum wells

〇Eita Tagawa¹, Ayano Morita¹, Hiroto Kise¹, Keisuke Minehisa², Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1.IST,Hokkaido Univ., 2.RCIQE,Hokkaido Univ.)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-A23-11]Insertion Effects of InGaAs Metamorphic Buffer on 1.3-µm Range Type-II Quantum Wells on GaAs Substrate

〇Ryota Imoto¹, Takeshi Fujisawa², Hidetoshi Suzuki¹, Hirosumi Yokoyama¹, Koji Maeda¹, Masakazu Arai¹ (1.Miyazaki Univ., 2.Hosei Univ.)

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[10a-A23-12]Effects of exciton splitting energy on thermal quenching of photoluminescence spectrum in GaSb/AlGaSb multiple quantum wells on Si substrate.

〇Seiketsu Ou¹, Osamu Kojima¹, Kouichi Akahane² (1.Chiba Inst. Tech., 2.NICT)

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