[10a-C212-1~8] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[10a-C212-5] Evaluation of Ni-InGaAsP alloy for plasmonic electro-absorption modulators

〇Haruto Mori¹, Kentaro Komatsu¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹ (1.The Univ. of Tokyo)

Keywords:

Si photonics,Plasmonic waveguide,Modulator

In recent years, the demand for improved performance in silicon photonics for co-packaged optics (CPO) has driven research into plasmonic devices using III-V semiconductors. However, their complex fabrication processes remain a challenge, leading to the proposal of processes utilizing metal alloys. In this study, in order to use a Ni-InGaAsP alloy as an electrode for InGaAsP-based plasmonic electro-absorption modulators, we fabricated the Ni-InGaAsP alloy—whose optical properties were previously unknown—and experimentally evaluated its applicability to plasmonic waveguides.