[10a-C212-1~8] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-C212-8] High-Power Ge-on-Si Photodetector with Four-Port Oblique Optical Coupling for Enhanced Bandwidth Stability

〇(D)CHAO ZHANG¹, Rui Tang¹, Makoto Okano², Kasidit Toprasertpong¹, Mitsuru Takenaka¹ (1.The Univ. of Tokyo, 2.National Inst. of Advanced Indus. Sci. and Tech)

Keywords:

Si photonics,Photodetector

In this work, We demonstrated a four-port oblique-coupled Ge-on-Si PIN PD achieving 1.04 A/W responsivity and 64.4 mA photocurrent, while maintaining 5 and 15 GHz bandwidth at 35 and 15 mA, confirming improved bandwidth retention for high-power RF photonics.