講演情報

10:45 〜 11:00奨励賞エントリー

[10a-C212-8]High-Power Ge-on-Si Photodetector with Four-Port Oblique Optical Coupling for Enhanced Bandwidth Stability

〇(D)張超¹、唐睿¹、岡野誠²、Kasidit Toprasertpong¹、竹中充¹ (1.東大工、2.産総研)

キーワード：

Si photonics、Photodetector

In this work, We demonstrated a four-port oblique-coupled Ge-on-Si PIN PD achieving 1.04 A/W responsivity and 64.4 mA photocurrent, while maintaining 5 and 15 GHz bandwidth at 35 and 15 mA, confirming improved bandwidth retention for high-power RF photonics.

セッション詳細へ戻る