Presentation Information
[10a-C310-1]Epitaxial growth of Zr-type metal organic framework on α-Al2O3(0001)
〇Ryo Nakayama1, Shunta Iwamoto2, Seoungmin Chon2, Ryota Shimizu3, Taro Hitosugi1 (1.The Univ. Tokyo, 2.Science Tokyo, 3.IMS)
Keywords:
metal-organic framework,epitaxial growth,vapor deposition
Metal–organic frameworks (MOFs) are crystalline porous materials composed of metal ions and organic ligands. To exploit their anisotropic properties and investigate interfacial phenomena, epitaxial growth, in which the crystal orientation is controlled on a seed substrate, is essential. In this study, we achieved the epitaxial growth of UiO-66-(OH)2, a chemically stable Zr(IV)-based MOF, on an unmodified α-Al2O3(0001) substrate using a two-step process combining vacuum deposition and solvent-vapor annealing. X-ray diffraction revealed that the resulting film exhibited a (111) out-of-plane orientation and an in-plane orientation aligned with the substrate. This work demonstrates the first epitaxial growth of a Zr(IV)-based MOF.