[10a-C310-1~14] CS.9 Code-sharing session of 6.3&6.4

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-C310-13] Epitaxy and physical properties of the mixed-anion compound ZrN_xH_y

〇(DC)Daichi Miyazaki¹, Kohei Yoshimatsu¹, Akira Ohtomo¹ (1.Science Tokyo)

Keywords:

mixed-anion compound,nitride hydride,epitaxial thin film

We have recently established a technique for fabricating thin films of the mixed-anion compound ZrN_xH_y on c-plane α-Al₂O₃ substrates. However, fabricating in-plane oriented films remained a challenge. In this study, we investigated the in-plane orientation temperatures of ZrN and ZrH₂, and achieved the epitaxial growth of ZrN_xH_y at 600°C on (111) MgO substrates. Furthermore, the residual resistivity of the thin film decreased with in-plane orientation. In this presentation, we will also discuss the electronic effects of mixed- anionization.