Presentation Information
[10a-C310-2]Anomalous Interface Crystal Tilt in Electronic Ferroelectric LuFe2O4 Thin Films Derived from Its 2D-Like Hexagonal Structure
〇Atsushi Fukuchi1,7, Hiroki Arisawa1,2,3, Eiji Saitoh1,2,3,4,5,7, Hiroyuki Kobayashi6, Satoshi Satoshi1,6,7 (1.UT-Sumitomo Chemical Cooperation Program, 2.Dept. Appl. Phys, Univ. Tokyo, 3.RIKEN CEMS, 4.BAI Univ. Tokyo, 5.AIMR Tohoku Univ., 6.Sumitomo Chemical Collaborative Research Cluster, 7.JST CREST)
Keywords:
layered structure,charge order,electronic ferroelectric
Layered hexagonal oxide LuFe2O4 is a charge-ordered material that undergoes an ordering transition between Fe2+ and Fe3+ at around 320 K. Owing to its robust charge ordering, it has been recognized as an important platform for electronic ferroelectricity, a purely electronic emergent form of ferroelectricity. Atomic-scale control of surface and interface structures is therefore highly desired for LuFe2O4 thin films toward device implementation of this potential ferroelectricity. We grew epitaxial LuFe2O4 films on various single-crystal substrates with controlled structures using pulsed laser deposition to explore the possibility of atomic-scale control of film surfaces. We found that an anomalously large lattice tilt of >4.0° appears on the (0001) surfaces of LuFe2O4/YSZ (111) thin films with a substrate miscut angle of 5.0°. This behavior potentially arises from the strongly two-dimensional nature of the LuFe2O4 lattice and highlights the distinctive nature of its growth mechanism.