[10a-E101-1~11] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-E101-1] Study on the improvement of luminescent properties through the InGaN strain relaxation mechanism unique to ELO stripes

〇Yoshinobu Kawaguchi¹, Motohisa Usagawa¹, Kazuma Takeuchi¹, Yoshinobu Matsuda², Mitsuru Funato², Takeshi Kamikawa¹ (1.Kyocera Corporation, 2.Kyoto Univ.)

Keywords:

InGaN,ELO,strain